High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

Authors

  • S.K. Mah Department of Electrical Engineering, Faculty of Engineering, Nilai University 71800 Nilai, Negeri Sembilan, Malaysia Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN) 43000 Kajang, Selangor, Malaysia Aibrahim@uniten.edu.my
  • I. Ahmad Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN) 43000 Kajang, Selangor, Malaysia
  • P. J. Ker Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN) 43000 Kajang, Selangor, Malaysia
  • Noor Faizah Z. A. Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN) 43000 Kajang, Selangor, Malaysia

Keywords:

High-k dielectric, La2O3, metal gate, NMOS,

Abstract

High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the Ntype Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness.

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Published

2018-07-04

How to Cite

Mah, S., Ahmad, I., Ker, P. J., & Z. A., N. F. (2018). High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 10(2-6), 1–5. Retrieved from https://jtec.utem.edu.my/jtec/article/view/4361

Issue

Vol. 10 No. 2-6: Embracing The 4th Industrial Revolution: Innovation in Telecommunication, Electronic & Computer Engineering II

Section

Articles

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