Optimization of Process Parameters for Threshold Voltage and Leakage Current based on Taguchi Method

Authors

  • Noor Faizah Z.A. Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN), 43009 Kajang, Selangor, Malaysia.
  • I. Ahmad Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN), 43009 Kajang, Selangor, Malaysia.
  • P.J. Ker Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN), 43009 Kajang, Selangor, Malaysia.
  • P.S. Menon Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor, Malaysia.
  • Afifah Maheran A.H Centre for Telecommunication Research and Innovation, Faculty of Electronics and Computer Engineering, Universiti Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya, Durian Tunggal, 76100 Melaka, Malaysia.
  • S.K. Mah Electronics Research Group, Institute of Power Engineering, Universiti Tenaga Nasional (UNITEN), 43009 Kajang, Selangor, Malaysia.

Keywords:

ANOVA, ATHENA, ATLAS, Taguchi Method, Silvaco TCAD tools,

Abstract

In this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Technology Computer Aided Design (TCAD) tools. The simulation studies were directed under four varying process parameters, which are Vt adjust implantation dose, the halo tiling angle, the S/D implantation dose and the compensation implantation dose. The L9 Orthogonal Array (OA), the signalto-noise ratio (SNR), and the analysis of variance (ANOVA) were used to study the performance characteristics and to gain an optimum combination of parameter settings. It was revealed that the Vt adjust implantation dose was the most influential parameter on the Vth and Ileak. Furthermore, it also improves the device performance. The result of Vth complied with the projections made by the International Technology Roadmap for Semiconductors (ITRS).

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Published

2018-07-05

How to Cite

Z.A., N. F., Ahmad, I., Ker, P., Menon, P., A.H, A. M., & Mah, S. (2018). Optimization of Process Parameters for Threshold Voltage and Leakage Current based on Taguchi Method. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 10(2-7), 143–146. Retrieved from https://jtec.utem.edu.my/jtec/article/view/4442

Issue

Vol. 10 No. 2-7: Embracing The 4th Industrial Revolution: Innovation in Telecommunication, Electronic & Computer Engineering III

Section

Articles

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Copyright (c) 2024 Journal of Telecommunication, Electronic and Computer Engineering

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)

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