The Impact of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETs for Low Power Device
Keywords:
Gate-Induced Drain Leakage (GIDL), Low Power Application, Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET),Abstract
In this research, we investigated the impact of Gate-Induced Drain Leakage (GIDL) on scaled Metal-OxideSemiconductor Field-Effect Transistor (MOSFET) for low power application. The output of this research determined the implications of GIDL on the performance of MOSFET with various sizes that are supplied via low voltage power. The MOSFET design parameters were proposed by referring to the International Technology Roadmap for Semiconductors (ITRS), 2011 edition. SILVACO’s DEVEDIT and ATLAS software was used for this research to design a device structure and obtain output characteristics. Three MOSFETs with different physical gate length and several other parameters were designed and simulated. From the extracted data, it shows that as the size of MOSFET physical gate length become smaller, the leakage current tends to be higher. Apart from GIDL current (IGIDL) value, the “ON” current (ION) value and threshold voltage (VTH) value also been extracted for all MOSFET designs.References
S. T. M, "Scaling of MOSFETs," in Indo German Winter Academy, Digha, 2006.
Ren-Ji.C, Sah C.T, IEEE Transaction on Electron Devices, 1983.
J.R. Brews. (1979). IEEE Trans. Electron Dev. ED-26(11),p1696
C. Fiegna et al. (June 1994). Scaling The MOS Transistor below 0.1um, IEEE Transactions on Electron Devices, Vol 41, No. 6
T. Hiramoto, "Low Power and Low Voltage MOSFET," Special issue on low power, high speed CMOS technology, vol. 38, no. 2, p. 9, 2000.
S. A. Parkle, "Design for suppression of GIDL," IEEE Transaction on Electron Devices, vol. 39, no. 7, p. 3, 1992.
J. L. a. Y. Y.K. Fang, "Investigation of Bulk Traps Enhanced Gate Induced Leakage Current in Hf-based MOSFETs," IEEE Electron Device Letter, vol. 29, no. 5, pp. 509 - 511, 2008.
B. C. a. L. Harrison, "Zero-power MOSFETs reduces power consumption," in Advanced Linear Devices, Sydney, 2007.
J.-H.Y. Bum-Joon Kim, "Characteristics of Low-powered Dual MOSFET," University of Seoul, Seoul, 2011.
K. Jeon, "Band-to-Band Tunnel Transistor Design and Modeling For Low Power Applications," University of California, Berkeley, 2012.
Downloads
Published
How to Cite
Issue
Section
License
TRANSFER OF COPYRIGHT AGREEMENT
The manuscript is herewith submitted for publication in the Journal of Telecommunication, Electronic and Computer Engineering (JTEC). It has not been published before, and it is not under consideration for publication in any other journals. It contains no material that is scandalous, obscene, libelous or otherwise contrary to law. When the manuscript is accepted for publication, I, as the author, hereby agree to transfer to JTEC, all rights including those pertaining to electronic forms and transmissions, under existing copyright laws, except for the following, which the author(s) specifically retain(s):
- All proprietary right other than copyright, such as patent rights
- The right to make further copies of all or part of the published article for my use in classroom teaching
- The right to reuse all or part of this manuscript in a compilation of my own works or in a textbook of which I am the author; and
- The right to make copies of the published work for internal distribution within the institution that employs me
I agree that copies made under these circumstances will continue to carry the copyright notice that appears in the original published work. I agree to inform my co-authors, if any, of the above terms. I certify that I have obtained written permission for the use of text, tables, and/or illustrations from any copyrighted source(s), and I agree to supply such written permission(s) to JTEC upon request.