SiGe Optical Modulator with NPN Configuration Over Varies Doping Type
Keywords:
NPN, SiGe Optical Modulator, Silvaco,Abstract
This project proposed the design of SiGe optical modulator with NPN configuration by using Silvaco application. The accurate design is required to develop the best performance of optical modulator device. The designs are develop using instruction in DECKBUILD using 3 different doping type of material which are Boron, Aluminum and Indium for P+ doping while Antimony, Phosphorus and Arsenic for N+ doping. A different performance when varying doping material is expected to be developed. The parameter which has been analysis are refractive index and absorption loss. From the simulation and analysis, it was observed that doping material using Antimony as N+ and Indium as P+ give the highest reflection index change compare to other material. While doping material using Phosphorus as N+ and Boron as P+ give the lowest absorption loss compare to other materialReferences
David Harame, “SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices”, ECS Transaction Issue 10, 2008.
Neamen and Donald A. “Semiconductor Physics and Devices: Basic Principles (3rd ed.)”. McGraw-Hill Higher Education. ISBN 0-07-232107-5, 2003.
Sylvain Maine, Delphine Marris-Morini , Laurent Vivien , Daniel Pascal , Eric Cassan, et al.“Design Optimization of SiGe/Si: Modulation-doped Multiple Quantum Well Modulator for High-speed Operation”, Proc. SPIE 6183, Integrated Optics, Silicon Photonics, and Photonic Integrated Circuits, 61830D; 20 April 2006
GAO Yong,LI Guo-zheng, LIU Xi-ding et al. “SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect”. Chin. Phys. Lett.,1996, 13(3): 189-191.
L.C. Kimerling. “Photons to The Rescue: Microelectronics becomes Microphotonics”, Electrochem. Soc. Interface, p.28, Summer 2000.
P. S. Menon, K. Kandiah, A. A. Ehsan and S. Shaari, “The Development of a New Responsivity Prediction Model for In(0.53)Ga(0.47)As Interdigitated Lateral PIN Photodiode, Journal of Optical Communication”, vol.30, no.1, pp.2-6, 2009.
K. Preston, S. Manipatruna, A. Gondarenko, C. B. Poitras and M. Lipson, “Deposited Silicon High-speed Integrated Electro-optic Modulator”, Optics Express, vol.17, no.7, pp.5118-5124, 2009.
8. A.S.M. Zain, S. Markov, B. Cheng and A. Asenov,
“Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET”, Solid State Electronic, Vol. 90, pp. 51-55, 2013
Downloads
Published
How to Cite
Issue
Section
License
TRANSFER OF COPYRIGHT AGREEMENT
The manuscript is herewith submitted for publication in the Journal of Telecommunication, Electronic and Computer Engineering (JTEC). It has not been published before, and it is not under consideration for publication in any other journals. It contains no material that is scandalous, obscene, libelous or otherwise contrary to law. When the manuscript is accepted for publication, I, as the author, hereby agree to transfer to JTEC, all rights including those pertaining to electronic forms and transmissions, under existing copyright laws, except for the following, which the author(s) specifically retain(s):
- All proprietary right other than copyright, such as patent rights
- The right to make further copies of all or part of the published article for my use in classroom teaching
- The right to reuse all or part of this manuscript in a compilation of my own works or in a textbook of which I am the author; and
- The right to make copies of the published work for internal distribution within the institution that employs me
I agree that copies made under these circumstances will continue to carry the copyright notice that appears in the original published work. I agree to inform my co-authors, if any, of the above terms. I certify that I have obtained written permission for the use of text, tables, and/or illustrations from any copyrighted source(s), and I agree to supply such written permission(s) to JTEC upon request.
