SiGe Optical Modulator with NPN Configuration Over Varies Doping Type

Abstract

This project proposed the design of SiGe optical modulator with NPN configuration by using Silvaco application. The accurate design is required to develop the best performance of optical modulator device. The designs are develop using instruction in DECKBUILD using 3 different doping type of material which are Boron, Aluminum and Indium for P+ doping while Antimony, Phosphorus and Arsenic for N+ doping. A different performance when varying doping material is expected to be developed. The parameter which has been analysis are refractive index and absorption loss. From the simulation and analysis, it was observed that doping material using Antimony as N+ and Indium as P+ give the highest reflection index change compare to other material. While doping material using Phosphorus as N+ and Boron as P+ give the lowest absorption loss compare to other material