Design of Shallow Source/Drain Extension (SDE) Profiles in Improving Short -Channel Effect (SCE) in Nanoscale Devices

Authors

  • Mohd Hafiz Sulaiman Faculty of Electronic and Computer Engineering Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia
  • Anis Suhaila Mohd Zain Faculty of Electronic and Computer Engineering Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia
  • Ayuni Fateeha Muda Faculty of Electronic and Computer Engineering Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia
  • Sani Irwan Md Salim Faculty of Electronic and Computer Engineering Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia

Keywords:

Short-Channel Effect (SCE), Shallow Source/Drain Extension (SDE), Nanoscale Devices, Silvaco,

Abstract

This paper purposed the design of shallow source/drain extension (SDE) in improving short channel effect (SCE) in nanoscale devices. In order to increase the mobility and the speed of the electronic devices, semiconductor technology researchers face the limitations such as short channel effect in MOSFET device as it is unavoidable in scaling. Thus, the aim of this project is to improve the short-channel effect in nanoscale devices. The design parameter standard structure of MetalOxide-Semiconductor Field-Effect Transistor (MOSFET) were proposed referring to the International Technology Roadmap for Semiconductors (ITRS) 2011 edition and compared the structure with same standard structure of ITRS with modification to the junction depth that becomes more shallow source/drain extension (SDE). Silvaco’s DEVEDIT software is used to design the structure of MOSFET with three different gate lengths, while Silvaco’s ATLAS software is used to simulate the structure for data extraction to obtain the output graph. From the output, it shows that, as the size of MOSFET gate length becomes smaller, the threshold voltages also decrease. In improving the SCE, the value of threshold voltage, Vth, is slightly increases on shallower the source/drain extension (SDE). The value of “ON’’ current (ION) also has been extracted for all designs of MOSFET.

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Published

2017-03-15

How to Cite

Sulaiman, M. H., Mohd Zain, A. S., Muda, A. F., & Md Salim, S. I. (2017). Design of Shallow Source/Drain Extension (SDE) Profiles in Improving Short -Channel Effect (SCE) in Nanoscale Devices. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(1-4), 101–105. Retrieved from https://jtec.utem.edu.my/jtec/article/view/1789

Issue

Vol. 9 No. 1-4: Smart City Technology in Communication and Computer Engineering II

Section

Articles

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