Design of Shallow Source/Drain Extension (SDE) Profiles in Improving Short -Channel Effect (SCE) in Nanoscale Devices
Keywords:
Short-Channel Effect (SCE), Shallow Source/Drain Extension (SDE), Nanoscale Devices, Silvaco,Abstract
This paper purposed the design of shallow source/drain extension (SDE) in improving short channel effect (SCE) in nanoscale devices. In order to increase the mobility and the speed of the electronic devices, semiconductor technology researchers face the limitations such as short channel effect in MOSFET device as it is unavoidable in scaling. Thus, the aim of this project is to improve the short-channel effect in nanoscale devices. The design parameter standard structure of MetalOxide-Semiconductor Field-Effect Transistor (MOSFET) were proposed referring to the International Technology Roadmap for Semiconductors (ITRS) 2011 edition and compared the structure with same standard structure of ITRS with modification to the junction depth that becomes more shallow source/drain extension (SDE). Silvaco’s DEVEDIT software is used to design the structure of MOSFET with three different gate lengths, while Silvaco’s ATLAS software is used to simulate the structure for data extraction to obtain the output graph. From the output, it shows that, as the size of MOSFET gate length becomes smaller, the threshold voltages also decrease. In improving the SCE, the value of threshold voltage, Vth, is slightly increases on shallower the source/drain extension (SDE). The value of “ON’’ current (ION) also has been extracted for all designs of MOSFET.Downloads
Published
How to Cite
Issue
Section
License
TRANSFER OF COPYRIGHT AGREEMENT
The manuscript is herewith submitted for publication in the Journal of Telecommunication, Electronic and Computer Engineering (JTEC). It has not been published before, and it is not under consideration for publication in any other journals. It contains no material that is scandalous, obscene, libelous or otherwise contrary to law. When the manuscript is accepted for publication, I, as the author, hereby agree to transfer to JTEC, all rights including those pertaining to electronic forms and transmissions, under existing copyright laws, except for the following, which the author(s) specifically retain(s):
- All proprietary right other than copyright, such as patent rights
- The right to make further copies of all or part of the published article for my use in classroom teaching
- The right to reuse all or part of this manuscript in a compilation of my own works or in a textbook of which I am the author; and
- The right to make copies of the published work for internal distribution within the institution that employs me
I agree that copies made under these circumstances will continue to carry the copyright notice that appears in the original published work. I agree to inform my co-authors, if any, of the above terms. I certify that I have obtained written permission for the use of text, tables, and/or illustrations from any copyrighted source(s), and I agree to supply such written permission(s) to JTEC upon request.