Impact of Different Dose, Energy and Tilt Angle in Source/Drain Implantation for Vertical Double Gate PMOS Device

Abstract

In this paper, an investigation on the impact of different dose, energy and tilt angle of Source/Drain (S/D) implantation towards threshold voltage (VTH) value in vertical double-gate PMOS device was conducted by using L8 2k-factorial design. The level of significance for each process parameters on VTH was determined by using analysis of variance (ANOVA). The virtual fabrication and electrical characterization of the device were performed by using a process simulator (ATHENA) and a device simulator (ATLAS) respectively. This procedure was followed by 2k-factorial design to aid in optimizing the process parameter variations towards VTH value. Based on the final results, the most dominant factor that affects VTH value was found to be S/D implant energy. Meanwhile, the nominal possible VTH value after the optimization analysis was observed to be – 0.4509V. The percentage difference is only 0.87% higher than ITRS 2013 prediction for low power (LP) requirement in the year 2020.