Surface Analysis of Thermally Growth Ge Oxide on Ge(100)
Keywords:Germanium, Oxidation, X-Ray Photoelectron Spectroscopy,
AbstractThe understanding of Ge oxidation is utmost importance in order to form the good quality dielectric/Ge interface in fabricating Ge Metal Oxide Semiconductor Field Effect Transistor (MOSFETs). In addition, the mechanism of Ge oxidation is still under intensive studies. For Silicon oxidation, Deal and Grove Model have been accepted to explain the Si Oxidation mechanism. The purpose of this paper is to report the mechanism of Ge oxidation at two different temperatures, 375 and 490°C and the detail of Ge oxide composition at Ge oxide/Ge interface. After wet chemical cleaning with HCl, the thermal oxidation was performed at temperature 375 and 490°C at atmospheric pressure. The thickness and composition of Ge oxide were measured with spectroscopic ellipsometry and x-ray photoelectron spectroscopy, respectively. It was observed that the n value extracted from a log-log plot of oxidation time versus oxide thickness was dependent on the oxidation temperature. The oxygen-deficient region was formed during thermal oxidation of Ge and the electronic states of suboxide component were observed in the region within 2.3eV above the top valence band. The novelty of this work is to investigate the kinetics oxidation of Ge and evaluate the composition of oxide layer after thermal oxidation that becomes useful information for the development of Ge MOSFETs.
How to Cite
TRANSFER OF COPYRIGHT AGREEMENT
The manuscript is herewith submitted for publication in the Journal of Telecommunication, Electronic and Computer Engineering (JTEC). It has not been published before, and it is not under consideration for publication in any other journals. It contains no material that is scandalous, obscene, libelous or otherwise contrary to law. When the manuscript is accepted for publication, I, as the author, hereby agree to transfer to JTEC, all rights including those pertaining to electronic forms and transmissions, under existing copyright laws, except for the following, which the author(s) specifically retain(s):
- All proprietary right other than copyright, such as patent rights
- The right to make further copies of all or part of the published article for my use in classroom teaching
- The right to reuse all or part of this manuscript in a compilation of my own works or in a textbook of which I am the author; and
- The right to make copies of the published work for internal distribution within the institution that employs me
I agree that copies made under these circumstances will continue to carry the copyright notice that appears in the original published work. I agree to inform my co-authors, if any, of the above terms. I certify that I have obtained written permission for the use of text, tables, and/or illustrations from any copyrighted source(s), and I agree to supply such written permission(s) to JTEC upon request.