RF Performance Enhancement of Gallium Oxide MOSFET using p-type NiO Pocket near Source and Drain Regions


  • Narendra Yadava Department of ECE, Madan Mohan Malaviya University of Technology, Gorakhpur, U.P. 273010, India
  • R. K. Chauhan Department of ECE, Madan Mohan Malaviya University of Technology, Gorakhpur, U.P. 273010, India


Gallium Oxide MOSFET, Leakage Currents, RF Figure of Merits, RFICs, Wide Band Gap Semiconductors,


The paper puts forward an impact of using p-type NiO pocket near the channel/drain and channel/source interface regions on the RF performance of the gallium oxide MOSFET. This arrangement results in smaller electric field near the respective junctions and helps to compensate for the leakages that arises from the increased value of parasitic components. The key figures of merits used in the analysis are transconductance (gm), intrinsic capacitances (gate to drain capacitance Cgd and gate to source capacitance Cgs), output conductance (gd), cut-off frequency (fT), transconductance frequency product (TFP), gain frequency product (GFP) and the gain transconductance frequency product (GTFP). The analysis was carried out by using Atlas 2D device simulator.


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How to Cite

Yadava, N., & Chauhan, R. K. (2019). RF Performance Enhancement of Gallium Oxide MOSFET using p-type NiO Pocket near Source and Drain Regions. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 11(4), 19–23. Retrieved from https://jtec.utem.edu.my/jtec/article/view/5458