A Modified Source Impact Ionisation MOSFET (MS I-MOS) for Low Power and Fast Switching Digital Applications

Authors

  • Manvendra Singh Chauhan Department of Electronics and Communication, Madan Mohan Malaviya University of Technology, Gorakhpur, India
  • R. K. Chauhan Department of Electronics and Communication, Madan Mohan Malaviya University of Technology, Gorakhpur, India

Keywords:

Avalanche, Bipolar Junction Transistor (BJT), DIBL, Impact Ionization, Modified Source, Operating Voltage, Short Channel Effects,

Abstract

This paper presents a two-dimensional (2D) modified source n-p-n impact ionisation MOSFET, called MS IMOS, to suppress the short channel effects and increase the oncurrent (ION) to off-current (IOFF) ratio. The proposed device is an n-p-n I-MOS on silicon on insulator (SOI), upon which a source engineering is performed. The proposed device inherits the characteristics of bipolar I-MOS, with the advantage of reduced floating body effect and the increased ION to IOFF ratio, it exhibits a lower operating voltage than that of earlier I-MOS structures. The reliability issues related to hot carrier injection in the gate oxide has also been addressed effectively in the proposed structure due to lower operating voltage.

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Published

2018-08-28

How to Cite

Chauhan, M. S., & Chauhan, R. K. (2018). A Modified Source Impact Ionisation MOSFET (MS I-MOS) for Low Power and Fast Switching Digital Applications. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 10(3), 15–19. Retrieved from https://jtec.utem.edu.my/jtec/article/view/3374

Issue

Vol. 10 No. 3: July - September 2018

Section

Articles

License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)