Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation

Authors

  • A. R Othman Universiti Teknikal Malaysia Melaka
  • A. H Hamidon Universiti Teknikal Malaysia Melaka
  • M.N Husain Universiti Teknikal Malaysia Melaka
  • M.S Johal Universiti Teknikal Malaysia Melaka
  • A.B Ibrahim Universiti Teknikal Malaysia Melaka

Keywords:

Amplifier, Radio Frequency, Microstrip.

Abstract

This paper presents a design of radio frequency amplifier (RFA), which operates at 5.8 GHz frequency for WiMAX application. The RFA designed used T-matching network consisting of lump reactive elements, 3 dB attenuator and microstrip line at the input and output impedance. The RFA developed in this project contribute a gain of 15.6 dB with overall noise figure of 2.4 dB. The overall measured bandwidth measures is 1.240 GHz with S parameters S11, S12 and S22 measured are -12.4 dB, -25.5 dB and -12.3 dB respectively. The RFA used FET transistor EPA018A from Excelics Semiconductor Inc

 

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How to Cite

Othman, A. R., Hamidon, A. H., Husain, M., Johal, M., & Ibrahim, A. (2015). Wideband 5.8 GHz Radio Frequency Amplifier with 3 dB Π- Network Attenuator Isolation. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 3(1), 1–6. Retrieved from https://jtec.utem.edu.my/jtec/article/view/397

Issue

Vol. 3 No. 1

Section

Articles

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