The Effect of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETS of Low Power Consumptions

Authors

  • Thailis Bounya Ngelayang Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
  • Muhammad Syafiq Noor Azizi Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
  • Nornikman Hassan Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
  • Muhammad Zuhair Bolqiah Edrisa Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.
  • Mohd Hasbullah Putra Faculty of Electronics and Computer Engineering (FKEKK), Universiti Teknikal Malaysia Melaka, Hang Tuah Jaya, 76100 Durian Tunggal, Melaka, Malaysia.

Keywords:

Gate-Induced Drain Leakage (GIDL), MetalOxide-Semiconductor Field-Effect Transistor (MOSFET), Scaling, Low Power Application,

Abstract

This project is aimed to study the impact of GateInduced Drain Leakage (GIDL) on scaled Metal-OxideSemiconductor Field-Effect Transistor (MOSFET) for low power efficient application. The MOSFET is operated with low power consumption. Microchip industries are undergoing an evolution where the size of a device is getting smaller, but the performance is great. Thus, this project studies the leakage mechanism in terms of the GIDL current on MOSFET that operates for low power and its physical size had been reduced. The output of this project will determine on what is the implications of GIDL on the performance of MOSFET with various sizes that been supplied with low voltage power. The characteristic of GIDL was studied and from those characteristics, MOSFET design parameters were proposed by referring to the International Technology Roadmap for Semiconductors (ITRS), 2011 edition. DEVEDIT and Atlas application in Silvaco TCAD software was used in this project. Three MOSFET with different physical gate length and several other parameters were designed in DEVEDIT application, then being simulated for data extraction in Atlas application. From the data extracted, it shows that as the size of MOSFET physical gate length become smaller, the leakage current tends to be higher. Apart from GIDL current (IGIDL) value, the “ON” current (ION) value and threshold voltage (VTH) value also been extracted for all MOSFET designs.

References

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Published

2017-03-15

How to Cite

Ngelayang, T. B., Noor Azizi, M. S., Hassan, N., Bolqiah Edrisa, M. Z., & Putra, M. H. (2017). The Effect of Gate-Induced Drain Leakage (GIDL) on Scaled MOSFETS of Low Power Consumptions. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(1-3), 157–160. Retrieved from https://jtec.utem.edu.my/jtec/article/view/1762

Issue

Vol. 9 No. 1-3: Smart City Technology in Communication and Computer Engineering I

Section

Articles

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