Effects of Annealing Time on Electrodeposited-n-Cu2O Thin Film

Authors

  • Nurliyana Mohamad Arifin Microelectronic & Nanotechnology - Shamsuddin Research Centre (MiNT-SRC). Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Fariza Mohamad Microelectronic & Nanotechnology - Shamsuddin Research Centre (MiNT-SRC). Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Chin Swee Fong Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Nabihah Ahmad Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Nik Hisyamudin Muhd Nor Faculty of Mechanical & Manufacturing Engineering, Universiti Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Masanobu Izaki Faculty of Mechanical Engineering, Toyohashi University of Technology, Hibari-gaoka, Tenpaku-cho, Toyohashi-shi, Japan

Keywords:

Annealing Time, Copper Oxide, Electrodeposition Method, Thin Film, Homojunction,

Abstract

This work focuses on the analysis of structural, morphological, topological and optical properties of n-type cuprous oxide (Cu2O) thin film through the various duration of the annealing process. The n-type Cu2O thin film used in this research was fabricated on Fluorine-Doped Tin Oxide (FTO) glass substrate by using potentiostat electrodeposition method at optimized parameters. The optimized parameters were fixed at pH 6.3, temperature of 60oC, deposition time of 30 minutes and potential voltage at -0.125 V vs Ag/AgCl. Then, the samples of n-type Cu2O were subjected to a different annealing time set of 20, 30, 40, 50 and 60 minutes. It was found that the most optimized annealing duration was 60 minutes with a fixed annealing temperature of 200 ºC. From the results, the properties of the n-type Cu2O thin film had enhanced by introduction of the annealing process. All the properties had characterized by using X-Ray Diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Atomic Force Microscopy (AFM), Ultraviolet visible spectrometer (UVVis) and Four Point Probe.

References

P.Simon, “Renewable energy medium-term market report 2015. Market Analysis and Forecasts to 2020 - Executive Summary,” International Energy Agency (IEA), p. 14, 2015.

F. Mohamad et al., “Effect of light intensity on the light-assisted electrochemical construction of (0001)-ZnO/(111)Cu2O heterostructure,” J. Nanosci. Nanotechnol., vol. 16, no. 12, 2016.

M. Izaki et al., “Electrodeposition of 1.4-eV-Bandgap p-Copper (II) Oxide Film With Excellent Photoactivity,” J. Electrochem. Soc., vol. 158, no. 9, p. D578, 2011.

Y. Hsu, J. Wu, M. Chen, Y. Chen, and Y. Lin, “Fabrication of homojunction Cu2O solar cells by electrochemical deposition,” Appl. Surf. Sci., vol. 354, pp. 8–13, 2015.

Y. Hwang, H. Ahn, M. Kang, and Y. Um, “The effects of thermallyinduced biaxial stress on the structural , electrical , and optical properties of Cu2O thin fi lms,” Curr. Appl. Phys., vol. 15, pp. S89– S94, 2015.

R. Liang, Y. Chang, P. Wu, and P. Lin, “Effect of annealing on the electrodeposited Cu2O fi lms for photoelectrochemical hydrogen generation,” Thin Solid Films, vol. 518, no. 24, pp. 7191–7195, 2010.

V. Figueiredo, E. Elangovan, and G. Gonc, “Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper,” Appliied Surf. Sci., vol. 254, pp. 3949– 3954, 2008.

L. Xiong, S. Huang, X. Yang, M. Qiu, Z. Chen, and Y. Yu, “p-Type and n-type Cu2O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical properties,” Electrochim. Acta, vol. 56, no. 6, pp. 2735–2739, 2011.

T. G. Kim, H. Oh, H. Ryu, and W.-J. Lee, “The study of post annealing effect on Cu2O thin-films by electrochemical deposition for photoelectrochemical applications,” J. Alloys Compd., vol. 612, pp. 74–79, 2014.

T. Minami, Y. Nishi, and T. Miyata, “High-Efficiency Cu2O Based Heterojunction Solar Cells Fabricated Using a Ga2O3 Thin Film as NType Layer,” Appl. Phys. Express, vol. 44101, no. 6, pp. 1–4, 1882.

F. B. Mohamad, C. A. Abang, N. H. B. M. Nor, and M. Izaki, The effect of solution temperature on electrodeposit-ZnO thin film, vol. 594–595. 2014.

F. Mohamad, C. A. Abang, N. H. Muhd Nor, and M. Izaki, “The Effect of Solution Temperature on Electrodeposit-ZnO Thin Film,” Key Eng. Mater., vol. 594–595, pp. 1131–1135, 2013.

M. R. Johan, M. S. M. Suan, N. L. Hawari, and H. A. Ching, “Annealing Effects on the Properties of Copper Oxide Thin Films Prepared by Chemical Deposition,” Int. J. Electrochem. Sci., vol. 6, pp. 6094–6104, 2011.

F. A. Akgul, G. Akgul, N. Yildirim, H. E. Unalan, and R. Turan, “Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films,” Mater. Chem. Phys., vol. 147, no. 3, pp. 987–995, 2014.

F. Mohamad et al., “Cyclic Voltammetry Measurement for n-Type Cu2O Thin Film Using Copper Sulphate-Based Solution,” Key Eng. Mater., vol. 730, pp. 119–124, 2017.

M. Izaki et al., “Effects of preparation temperature on optical and electrical characteristics of (111)-oriented Cu2O films electrodeposited on (111)-Au film,” Thin Solid Films, vol. 520, no. 6, pp. 1779–1783, 2012.

C. Chao, Y. Ohkura, T. Usui, and M. Jeffrey, “Methods for Improving Efficiencies of Cuprous Oxide Solar Cells,” Unpublished, 2009.

T. Yonezawa, H. Tsukamoto, and M. Matsubara, “RSC Advances conductive layers †,” RSC Adv., vol. 5, pp. 61290–61297, 2015.

Downloads

Published

2017-11-30

How to Cite

Mohamad Arifin, N., Mohamad, F., Fong, C. S., Ahmad, N., Muhd Nor, N. H., & Izaki, M. (2017). Effects of Annealing Time on Electrodeposited-n-Cu2O Thin Film. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(3-8), 129–132. Retrieved from https://jtec.utem.edu.my/jtec/article/view/3111

Issue

Vol. 9 No. 3-8: Recent Trend in Electronic, Computing and Communication

Section

Articles

License

TRANSFER OF COPYRIGHT AGREEMENT

The manuscript is herewith submitted for publication in the Journal of Telecommunication, Electronic and Computer Engineering (JTEC). It has not been published before, and it is not under consideration for publication in any other journals. It contains no material that is scandalous, obscene, libelous or otherwise contrary to law. When the manuscript is accepted for publication, I, as the author, hereby agree to transfer to JTEC, all rights including those pertaining to electronic forms and transmissions, under existing copyright laws, except for the following, which the author(s) specifically retain(s):

  1. All proprietary right other than copyright, such as patent rights
  2. The right to make further copies of all or part of the published article for my use in classroom teaching
  3. The right to reuse all or part of this manuscript in a compilation of my own works or in a textbook of which I am the author; and
  4. The right to make copies of the published work for internal distribution within the institution that employs me

I agree that copies made under these circumstances will continue to carry the copyright notice that appears in the original published work. I agree to inform my co-authors, if any, of the above terms. I certify that I have obtained written permission for the use of text, tables, and/or illustrations from any copyrighted source(s), and I agree to supply such written permission(s) to JTEC upon request.