Effects of Annealing Time on Electrodeposited-n-Cu2O Thin Film

Authors

  • Nurliyana Mohamad Arifin Microelectronic & Nanotechnology - Shamsuddin Research Centre (MiNT-SRC). Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Fariza Mohamad Microelectronic & Nanotechnology - Shamsuddin Research Centre (MiNT-SRC). Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Chin Swee Fong Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Nabihah Ahmad Department of Electronic Engineering, Faculty of Electrical & Electronic Engineering, Universiti Tun Hussein Onn Malaysia, 864000, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Nik Hisyamudin Muhd Nor Faculty of Mechanical & Manufacturing Engineering, Universiti Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor, Malaysia.
  • Masanobu Izaki Faculty of Mechanical Engineering, Toyohashi University of Technology, Hibari-gaoka, Tenpaku-cho, Toyohashi-shi, Japan

Keywords:

Annealing Time, Copper Oxide, Electrodeposition Method, Thin Film, Homojunction,

Abstract

This work focuses on the analysis of structural, morphological, topological and optical properties of n-type cuprous oxide (Cu2O) thin film through the various duration of the annealing process. The n-type Cu2O thin film used in this research was fabricated on Fluorine-Doped Tin Oxide (FTO) glass substrate by using potentiostat electrodeposition method at optimized parameters. The optimized parameters were fixed at pH 6.3, temperature of 60oC, deposition time of 30 minutes and potential voltage at -0.125 V vs Ag/AgCl. Then, the samples of n-type Cu2O were subjected to a different annealing time set of 20, 30, 40, 50 and 60 minutes. It was found that the most optimized annealing duration was 60 minutes with a fixed annealing temperature of 200 ºC. From the results, the properties of the n-type Cu2O thin film had enhanced by introduction of the annealing process. All the properties had characterized by using X-Ray Diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Atomic Force Microscopy (AFM), Ultraviolet visible spectrometer (UVVis) and Four Point Probe.

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Published

2017-11-30

How to Cite

Mohamad Arifin, N., Mohamad, F., Fong, C. S., Ahmad, N., Muhd Nor, N. H., & Izaki, M. (2017). Effects of Annealing Time on Electrodeposited-n-Cu2O Thin Film. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(3-8), 129–132. Retrieved from https://jtec.utem.edu.my/jtec/article/view/3111

Issue

Vol. 9 No. 3-8: Recent Trend in Electronic, Computing and Communication

Section

Articles

License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)