A Preliminary Study of Characterization Techniques for Reticle ESD Threshold Voltage Measurement
Keywords:
Characterization, Reticle, ESD, Threshold voltageAbstract
Recent studies have revealed that reticle robustness towards electrostatic field is reducing since the feature’s critical dimension is getting smaller. Reticle electrostatic damage is seen after the features was subjected at low Electrostatic Discharged (ESD) voltages. This characterization was conducted on a Chrome-on-glass (COG)/Binary reticle metal layer for Complementary Metal-Oxide Semiconductor (CMOS) 250nm technology node. International Technology Roadmap for Semiconductor (ITRS) and Semiconductor Equipment and Materials International (SEMI) uses the results of this reticle electrostatic damaged characterization, extrapolates it and establishes electrostatic field limits for semiconductor industry. Generally, a semiconductor wafer fabrication company will refer to this guideline to set up an Electrostatic Protective Area (EPA) for the expansion of current facilities or new facilities. As CMOS technology node shrinks further to 130nm, the photolithography process becomes more challenging since it requires printing smaller features accurately. A newly advanced reticle, called PSM (Phase-shift Mask) reticle has been introduced. PSM reticle features are made of Molybdenum Silicide (MoSi) material, which is different from the Binary reticle that uses Chromium. Existing guideline for electrostatic control limit from ITRS and SEMI may not be sufficient to protect PSM reticle from ESD damaged due to the different material features and the smaller critical dimension (gap distance between two parallel lines). This paper proposed a future work for characterizing PSM reticle ESD threshold voltage measurement and documented the result in ITRS and SEMI as separate guideline. This study will benefit semiconductor industry to implement more accurate EPA according to reticle type and technology node. The previous characterization techniques will be reviewed and critically compared in order to gain a better understanding of the reticle ESD damaged mechanism and propose new techniques for characterizing reticle that reflect actual production environment, the latest features material and lower technology node.References
J. Montoya, L.Levit, and A.Englisch, “A Study of the Mechanisms for ESD Damage to Reticles,” IEEE Trans. On Electronics Packaging Manufacturing, vol. 24-2, pp.78-85, April 2001.
SEMI E163-0212, “Guide for handling of Reticles and other extremely Electrostatic Sensitive (EES) items within specially designated areas,” Semiconductor Equipment and Materials International, 2012.
A. Rudack, M. Pendley, P. Gagnon, L.Levit, “Creating and Measuring Photomask Damage,” EOS/ESD Symposium, ESD Association, 2003.
J. Wiley and A. Steinman, “Investigating a new generation of ESD-induced reticle defects,” Micro, April 1999.
A. Wallash and L. Levit, “Electrical breakdown and ESD phenomena for devices with nanometer-to-micron gaps,” in Proceeding of SPIE-Reliability, Testing and Characterization of MEMS/MOEMS II, 2003, pp. 87-96.
G.Rider, “Zero Yield – The Price of Field-Induced Reticle Damage,” Future Fab Intl, 2007.
G. Rider, “Estimation of the field induced damage thresholds in reticles,” Microtome Precision Inc, Semiconductor Manufacturing Magazine, 2004.
C. Turley, L.Kindt, and J. Kinnear Jr, “Evaluating Electrostatic damage prevention methods for full-scale reticle manufacturing,” EOS/ESD Symposium, 2013.
G. Rider and T. Kalkur, “Experimental quantification of reticle electrostatic damage below the threshold for ESD,” Proceeding of SPIE Vol. 6922, 69221Y, 2008.
J. Montoya and T. Maloney, “Unifying Factory ESD Measurements and Component ESD Stress Testing,” EOS/ESD Symposium, 2005.
G. Rider, “EFM – A Pernicious New Electric Field-Induced Damage Mechanism in Reticle,’ SEMANTECH, 2007.
International Technology Roadmap for Semiconductors; http://www.itrs.net.
R. Dhariwal, J. Torres, and M. Desmulliez, “Electric field breakdown at micrometer separations in air and nitrogen at atmospheric pressure,” IEE Proceedings – Science, Measurement and Technology, vol. 147, pp. 261
A. Englisch, “Test Photomask and Method for Investigating ESD-Induced Reticle Defects,” Patent no. US 6,596,552 B2, 2003.
Chen et al, “Photomask Arrangement Protecting Reticle Patterns from Electrostatic Discharge Damage (ESD),” Patent no. US 5,989,754, 1999.
Bessy et al, “Static Resistant Reticle,” Patent no. US 6,180,291 B1, 2001.
YF Gu et al, “Chromium and Chromium-Based Alloys: Problem and Possibilities for High-Temperature Service,” JOM, 2004.
Z.Yao et al, “Molybdenum Silicide Based Materials and Their Properties,” Journal of Materials Engineering and Performance, vol 8, pp291-304, June 1999.
A.Steinman, “Preventing Electrostatic Problems in Semiconductor Manufacturing,” Compliance Engineering, 2004.
G.Rider, “Protection of Reticle against damage from Field-Induced Electrostatic Discharge,” SEMANTECH, 2003.
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