Electromagnetic Interference (EMI) Analysis on Surface Roughness of 3C-Silicon Carbide (3C-SiC) Deposited on Silicon (Si) Substrate

Authors

  • E. M. Cheng School of Mechatronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia. Bioelectromagnetic Research Group (BioEM), Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia.
  • N. F. Mohd Nasir School of Mechatronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia.
  • A. B. Shahriman School of Mechatronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia.
  • S. A. Baharuddin School of Mechatronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia.
  • M. S. Abdul Majid School of Mechatronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis, Malaysia.
  • P. W. Leech School of Electrical and Computer Engineering, Royal Melbourne Institute of Technology University, Melbourne, Vic. 3001, Australia.
  • P. Tanner Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, Queensland 4111, Australia.
  • A. S. Holland School of Electrical and Computer Engineering, Royal Melbourne Institute of Technology University, Melbourne, Vic. 3001, Australia.

Keywords:

3C-SiC, Absorption Coefficient, Electromagnetic Interference, Microwave Absorbing Material, Reflection Coefficient,

Abstract

Electronic devices may produce undesirable electromagnetic (EM) interference which can degrade the system performance and also affect human health. In this paper, the potential property of 3C-Silicon Carbide (3C-SiC) as the microwave absorbing material is investigated. The reflection coefficient, Г of 3C-SiC has been measured using an open-ended coaxial sensor. The substrates consisted of films of 3C-SiC of two different thicknesses (0.265µm and 0.285µm) with both polished and unpolished surfaces. The measurements were taken in the frequency range within 1.4 GHz to 18.8 GHz at room temperature. A continuous decrease in the reflection coefficient was measured in 3C-SiC as the frequency increased to 18.8GHz. The results have shown that the rougher surface of unpolished 3C-SiC of 0.285µm thickness could be applied as microwave absorbing material.

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Published

2018-05-31

How to Cite

Cheng, E. M., Mohd Nasir, N. F., Shahriman, A. B., Baharuddin, S. A., Abdul Majid, M. S., Leech, P. W., Tanner, P., & Holland, A. S. (2018). Electromagnetic Interference (EMI) Analysis on Surface Roughness of 3C-Silicon Carbide (3C-SiC) Deposited on Silicon (Si) Substrate. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 10(1-17), 73–77. Retrieved from https://jtec.utem.edu.my/jtec/article/view/4170

Issue

Vol. 10 No. 1-17: Recent Trends in Biomedical Engineering Systems and Technologies II

Section

Articles

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