A Low Power, High-Accuracy, 1-V CMOS Potentiostat for Amperometric Sensors

Authors

  • Mudasir Bashir National Institute of Technology, Warangal, India-506004
  • SreehariRao Patri National Institute of Technology, Warangal, India-506004
  • KrishnaPrasad KSR National Institute of Technology, Warangal, India-506004

Keywords:

Amperometric Sensor, Current Mirror, Potentiostat, Electrochemical Cells, Transimpedance Amplifier,

Abstract

In this paper, a three-electrode, low power potentiostat for biomedical and chemical sensor applications is implemented. A modified regulated cascode current mirror employing split length technique is used as an interface between the potentiostat circuit and sensor electrode, resulting in better performances in terms of input and output impedances, linearity, bandwidth and gain. The potentiostat is implemented for both single-ended and fully differential configurations using UMC 65 nm CMOS technology, having chip areas of 0.014 mm2 and 0.086 mm2 , respectively. The circuit results in detection of reduction-oxidation (redox) current of 50 nA to 4.8 µA and 0.1 nA to 7.2 µA, while consuming power of (0.06 to 3) µW and (1.2 to 18) µW for single-ended and differential potentiostat configurations, respectively. Differential potentiostat results in better linearity and dynamic range than single ended.

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Published

2017-09-01

How to Cite

Bashir, M., Patri, S., & KSR, K. (2017). A Low Power, High-Accuracy, 1-V CMOS Potentiostat for Amperometric Sensors. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(2-7), 25–32. Retrieved from https://jtec.utem.edu.my/jtec/article/view/2587

Issue

Vol. 9 No. 2-7: Towards Creative and Innovative Technologies for Humankind I

Section

Articles

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