# Avalanche Characteristics of AlxGa1-xN Avalanche Photodiodes

## Keywords:

Aluminium Gallium Nitride (AlGaN), avalanche photodiode, impact ionization, multiplication gain, excess noise factor## Abstract

AlGaN APDs are ultra-wide-bandgap semiconductor which has great potential, especially UV detection. In this work, Monte Carlo model has been developed to simulate the avalanche characteristics of thin AlxGa1-xN APDs with random ionization path lengths incorporating dead space effect in a wide range of x value. Holes dominate the impact ionization at higher field for Al0.3Ga0.7N, whereas electrons dominate the impact ionization for Al0.7Ga0.3N. Al0.3Ga0.7N also has higher electron and hole ionization coefficients compared to Al0.7Ga0.3N. Hole-initiated multiplication leads the mean multiplication gain for Al0.3Ga0.7N APDs, while electron-initiated multiplication leads the mean multiplication gain for l0.7Ga0.3N APDs. The breakdown voltage and excess noise at fixed mean multiplication gain of 10 and 20 are then compared. The breakdown voltage increases as the Al content increases. The excess noise of hole-initiated multiplication is the lowest at x ≈ 0.4 while excess noise of electron-initiated multiplication is lowest at x = 0.7. This shows that the ideal Al content is at x ≈ 0.4 as the excess noise is low with manageable breakdown voltage as excess noise for hole-initiated multiplication decreases as x approaching 0.4.

## References

J. C. Campbell, “Recent Advances in Telecommunications Avalanche Photodiodes”, Journal of Lightwave Technology, vol. 25, no. 1, pp. 109–121, 2007.

J. C. Campbell, “Recent Advances in Avalanche Photodiodes”, Journal of Lightwave Technology, vol. 34, no. 2, pp. 278–285, 2016.

H. You, Z. Shao, Y. Wang, L. Hu, D. Chen, H. Lu, R. Zhang and Y. Zheng, “Fine Control of the Electric Field Distribution in the Heterostructure Multiplication Region of AlGaN Avalanche Photodiodes”, IEEE Photonics Journal, vol. 9, no. 3, pp. 1–7, 2017.

J. Bulmer, P. Suvarna, J. Leathersich, J. Marini, I. Mahaboob, N. Newman and F. S. Shahedipour-Sandvik, “Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage”, IEEE Photonics Technology Letters, vol. 28, no. 1, pp. 39–42, 2016.

E. Monroy, F. Omnès and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors”, Semiconductor Science and Technology, vol. 2, no. 4, pp. 33, 2003.

J. Y. Tsao et al., “Ultrawide-bandgap semiconductors: Research opportunities and challenges”, Advanced Electron. Materials, pp. 1600501, 2017.

R. J. Kaplar, A. A. Allerman, A. M. Armstrong, M. H. Crawford, J. R. Dickerson, A. J. Fischer, A. G. Baca and E. A. Douglas, “Review-Ultra-wide-bandgap AlGaN power electronic devices”, ECS Journal of Solid State Science and Technology, vol. 6, no. 2, pp. Q3061–Q3066, 2017.

Z. Huang, J. Li, W. Zhang and H. Jiang, “AlGaN solar-blind avalanche photodiodes with enhanced multiplication gain using back-illuminated structure”, Applied Physics Express, vol. 6, no. 5, pp. 054101, 2013.

K. Dong, D. Chen, B. Jin, X. Jiang and J. Shi, “Al0.4Ga0.6N/Al0.15Ga0.85N Seperate Absorption and Multiplication Solar-Blind Avalanche Photodiodes with a One-Dimensional Photonic Crystal Filter”, IEEE Photonics Journal, vol. 8, no. 4, pp. 1–7, 2016.

R.D. Dupuis, J. Ryou, D. Yoo, J. B. Limb, Y. Zhang, S. Shen and D. Yoder, “High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates”, Proceedings of SPIE, vol. 6739, pp. 67391B, 2007.

T. Tut, M. Gokkavas, B. Butun, S. Butun, E. Ulker and E. Ozbay, “Experimental evaluation of impact ionization coefficients in AlxGa1-xN based avalanche photodiodes”, Applied Physics Letters, vol. 89, pp. 183524, 2006.

C. Bulutay, “Electron initiated impact ionization in AlGaN alloys”, Institute of Physic Publishing, Semiconductor Science and Technology, vol. 17, no. 10, pp. 59-62, 2002.

E. Bellotti and F. Bertazzi, “A numerical study of carrier impact ionization in AlxGa1-xN”, Journal of Applied Physics, vol. 111, pp. 103711, 2012.

Z. G. Shao, D. J. Chen, H. Lu, R. Zhang, D. P. Cao, W. J. Luo, Y. D. Zheng, L. Li and Z. H. Li, “High-Gain AlGaN Solar-Blind Avalanche Photodiodes”, IEEE Electron Device Letters, vol. 35, no. 3, pp. 372–374, 2014.

S. M. Sze and K. K. Ng, “Physics and Properties of Semiconductors-A Review”, In: Physics of Semiconductor Devices, John Wiley & Sons, Inc., pp. 82, 2006.

B. E. A. Saleh and M. C. Teich, “Semiconductor Photon Detectors”, In: Fundamentals of Photonics, John Wiley & Sons, Inc., pp. 666–667, 1991.

M. Hou, Z. Qin, C. He, L. Wei, F. Xu, X. Wang and B. Shen, “Study on AlGaN p-i-n-i-n solar-blind avalanche photodiodes with Al0.45Ga0.55N multiplication layer”, Electronic Materials Letters, vol. 11, no. 6, pp. 1053-1058, 2015.

H. Yan, C. Liu, H. Wang, Z. Zhang, M. Chen and H. Jiang, “Avalanche Multiplication in Schottky-type AlGaN Photodiode with High Al-composition”, 2018 Asia Communications and Photonics Conference (ACP) [Hangzhou, China: IEEE, 2018].

T. L. Wesley Ooi, P. L. Cheang, A. H. You, Y. K. Chan, “Mean Multiplication Gain & Excess Noise Factor of GaN and Al0.45Ga0.55N Avalanche Photodiodes”, The European Physical Journal Applied Physics, vol. 92, no. 1, pp. 10301, 2020.

P. Yuan, K. A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell and R. J. McIntyre, “A new look at impact ionization-Part II: Gain and noise in short avalanche photodiodes”, IEEE Transactions on Electron Devices, vol. 46, no. 8, pp. 1632–1639, 1999.

M. M. Hayat, W. L. Sargeant and B. E. A. Saleh, “Effect of dead space on gain and noise in Si and GaAs avalanche photodiodes”, IEEE Journal of Quantum Electronics, vol. 28, no. 5, pp. 1360–1365, 1992.

Y. Okuto and C. R. Crowell, “Threshold energy effect on avalanche breakdown voltage in semiconductor junctions”, Solid-State Electronics, vol. 18, no. 2, pp. 161–168, 1975.

S. A. Plimmer, J. P. R. David, D. S. Ong and K. F. Li, “A simple model for avalanche multiplication including deadspace effects”, IEEE Transactions on Electron Devices, vol. 46, no. 4, pp. 769–775, 1999.

Y. Tang, Q. Cai, L. Yang, K. Dong, D. Chen, H. Lu, R. Zhang and Y. Zheng, “High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions”, Chinese Physics Letters, vol. 34, no. 1, pp. 018502, 2017.

C. Yao, X. Ye, R. Sun, G. Yang, J. Wang, Y. Lu, P. Yan, J. Cao and S. Gao, “High-performance AlGaN-based solar-blind avalanche photodiodes with dual-periodic III–nitride distributed Bragg reflectors”, Applied Physics Express, vol. 10, no. 3, pp. 034302, 2017.

Q. Cai, M. Ge, J. Xue, L. Hu, D. Chen, H. Lu, R. Zhang and Y. Zheng, “An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes”, IEEE Photonics Journal, vol. 9, no. 4, pp. 1–7, 2017.

E. Bellotti and F. Bertazzi, “Numerical simulation of deep-UV avalanche photodetectors”, Physics and Simulation of Optoelectronic Devices XXII, vol. 8980, pp. 89800R, 2014.

G. M. Williams, M. Compton, D. A. Ramirez, M. M. Hayat and A. S. Huntington, “Multi-Gain-Stage InGaAs Avalanche Photodiode with Enhanced Gain and Reduced Excess Noise”, IEEE Journal of the Electron Devices Society, vol. 1, no. 2, pp. 54–65, 2013.

O. Kwon, M. M. Hayat, S. Wang, J. C. Campbell, A. Holmes, Y. Pan, B. E. A. Saleh and M. C. Teich, “Optimal Excess Noise Reduction in Thin Heterojunction Al0.6Ga0.4As–GaAs Avalanche Photodiodes”, IEEE Journal of Quantum Electronics, vol. 39, no. 10, pp. 1287 – 1296, 2003.

Z. Shao, X. Yang, H. You, D. Chen, H. Lu, R. Zhang, Y. Zheng and K. Dong, “Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes”, IEEE Electron Device Letters, vol. 38, no. 4, pp. 485–488, 2017.

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