RF/Analog Performances Enhancement of Short Channel GAAJ MOSFET using Source/Drain Extensions and Metaheuristic Optimization-based Approach

Authors

  • A. Yousfi LAAAS Laboratory, Department of Electronics, University Mostefa Benboulaid - Batna 2, 05000, Algeria
  • Z. Dibi LAAAS Laboratory, Department of Electronics, University Mostefa Benboulaid - Batna 2, 05000, Algeria
  • S. Aissi LAAAS Laboratory, Department of Electronics, University Mostefa Benboulaid - Batna 2, 05000, Algeria
  • H. Bencherif LAAAS Laboratory, Department of Electronics, University Mostefa Benboulaid - Batna 2, 05000, Algeria
  • L. Saidi LAAAS Laboratory, Department of Electronics, University Mostefa Benboulaid - Batna 2, 05000, Algeria

Keywords:

Analytical Model, GAAJ MOSFET, GA Optimization, Short Channel Effects,

Abstract

This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.

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Published

2018-05-30

How to Cite

Yousfi, A., Dibi, Z., Aissi, S., Bencherif, H., & Saidi, L. (2018). RF/Analog Performances Enhancement of Short Channel GAAJ MOSFET using Source/Drain Extensions and Metaheuristic Optimization-based Approach. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 10(2), 81–90. Retrieved from https://jtec.utem.edu.my/jtec/article/view/3352

Issue

Vol. 10 No. 2: April - June 2018

Section

Articles

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