An X-band MMIC Low Noise Amplifier Design with In0.7Ga0.3As/In0.52Al0.48As pHEMT


  • W. M. Jubadi Department of Electronic, Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Parit Raja, 86400 Batu Pahat, Johor, Malaysia
  • K. W. Ian Integrated Compound Semiconductor Ltd., Ashfield Road Cheadle, Cheshire, SK8 1BB, United Kingdom
  • M. Missous School of Electrical and Electronic Engineering, The University of Manchester, Manchester, M13 9PL, United Kingdom
  • N. Zainal Department of Electronic, Faculty of Electrical and Electronic Engineering, Universiti Tun Hussein Onn Malaysia, Parit Raja, 86400 Batu Pahat, Johor, Malaysia.


InGaAs/InAlAs pHEMT, Low Noise Amplifier, MMIC, X-band,


A low noise amplifier (LNA) design operating at Xband frequency range of 8 – 12 GHz using 0.25 µm In0.7Ga0.3As/In0.52Al0.48As pHEMT is presented. The target specifications of the MMIC LNA design are then addressed, the performance constraints and compromises that arise in the design of circuit topologies, biasing networks and matching configurations are also discussed. The design and analysis of the single input single-ended output, single and double stage LNAs are presented using all of the criteria. The simulations setup successfully showed an X-band LNAs are designed to match a 50 Ω input and output impedance. The proposed design is an MMIC LNA that combines high performance with low cost and avoids expensive external components.


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How to Cite

Jubadi, W. M., Ian, K. W., Missous, M., & Zainal, N. (2017). An X-band MMIC Low Noise Amplifier Design with In0.7Ga0.3As/In0.52Al0.48As pHEMT. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(3-8), 101–106. Retrieved from