An X-band MMIC Low Noise Amplifier Design with In0.7Ga0.3As/In0.52Al0.48As pHEMT
Keywords:InGaAs/InAlAs pHEMT, Low Noise Amplifier, MMIC, X-band,
AbstractA low noise amplifier (LNA) design operating at Xband frequency range of 8 – 12 GHz using 0.25 µm In0.7Ga0.3As/In0.52Al0.48As pHEMT is presented. The target specifications of the MMIC LNA design are then addressed, the performance constraints and compromises that arise in the design of circuit topologies, biasing networks and matching configurations are also discussed. The design and analysis of the single input single-ended output, single and double stage LNAs are presented using all of the criteria. The simulations setup successfully showed an X-band LNAs are designed to match a 50 Ω input and output impedance. The proposed design is an MMIC LNA that combines high performance with low cost and avoids expensive external components.
A. K. Ray and R. C. Shit, "Design of ultra-low noise, wideband lownoise amplifier for highly survival radar receiver," in IET Circuits, Devices & Systems, vol. 10, no. 6, pp. 473-480, 11 2016.
Y. Yamashita et al., "Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz," IEEE Electron Device Letters, vol. 23, no. 10, pp. 573-575, Oct. 2002.
D. H. Kim and J. A. del Alamo, “30-nm InAs pseudomorphic HEMTs on an InP substrate with a current-gain cutoff frequency of 628 GHz,” IEEE Electron Device Letters, vol. 29, pp. 830–833, 2008.
I. D. Robertson, S. Lucyszyn, “RFIC and MMIC Design and Technology”. IET, 2001, p. 562.
D. Kim, “30-nm InAs PHEMTs with fT = 644 GHz and fmax = 681 GHz,” IEEE Electron Device Letters, vol. 31, no. 8, pp. 806-808, Aug. 2010.
D. S. Deakin, E. A. Sovero, and J. A. Higgins, IEEE Microwave and Guided Wave Letters, vol. 6, no. 7, pp. 253–255, Jul. 1996.
H. M. H. Morkner, M. F. M. Frank, and D. M. D. Millicker, IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 1993.
A. de Boer, J. A. Hoogland, E. M. Suijker, M. van Wanum, and F. E. van Vliet, “Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier,”in Microwave engineering Europe, 17-Jun-2002.
M. Steinhauer, H. O. Ruob, H. Irion and W. Menzel, in IEEE Transactions on Microwave Theory and Techniques, vol. 56, no. 2, pp. 261-269, Feb. 2008.
P. E. Dewdney and T. J. Lazio, “The square kilometer array (SKA) radio telescope: Progress and technical directions,” Radio Science Bulletin, vol. no. 326, p. p. 5, 2008.
N. Ahmad, “Modelling and Design of Low Noise Amplifiers Using Strained InGaAs/InALAs/InP pHEMT For the Square Kilometre Array (SKA) Application,” Ph.D. thesis, The University of Manchester, 2012.
M. Mohamad Isa, “Low Noise Amplifiers Using Highly Strained InGaAs/InAlAs/InP pHEMT For Implementation In The Square Kilometre Array (SKA),” Ph.D. thesis, The University of Manchester, 2012.
K. W. Ian and M. Missous, “Thermally stable In0.7Ga0..3As/In0.5Al0.48As pHEMTs using thermally evaporated palladium gate metallization,” Semiconductor Science and Technology, vol. 29, no. 3, p. 035009, Mar. 2014.
H. A. Haus and R. B. Adler, “Optimum Noise Performance of Linear Amplifiers,” Proceedings of the IRE, vol. 46, 1958.
K. W. Ian, M. Exarchos, and M. Missous, “Fabrication of 250-nm Tgate In0.7Ga0.3As/In0.52Al0.48As pHEMT using a novel solvent reflow technique at room temperature,” in the 9th International Conference on Adv. Semiconductor Devices and Microsystems, 2012, pp. 99–102.
J. W. Matthews, in Journal of Crystal Growth, vol. 29, no. 3, pp. 273– 280, Jul. 1975.
R. W. Jung-Suk Goo; Hee-Tae Ahn; Ladwig, D.J.; Zhiping Yu; Lee, T.H.; Dutton, in Solid-State Circuits, IEEE Journal of , vol. 37, no.8, pp.994, 1002, Aug 2002.
M. Gassoumi, J. M. Bluet, C. Gaquière, G. Guillot, and H. Maaref, in Microelectronics Journal, vol. 40, no. 8, pp. 1161–1165, Aug. 2009.
Agilent Advance Design System, (ADS), Agilent, 2009.
M. H. Somerville, A. Ernst, J. A. Alamo, and S. Member, in IEEE Trans. on Electron Devices, vol. 47, no. 5, pp. 922–930, 2000.
L. Liu, A. R. Alt, H. Benedickter and C. R. Bolognesi, "InP/GaInAs pHEMT Ultralow-Power Consumption MMICs," 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Waikoloa, HI, 2011, pp. 1-4.
L. Liu, A. R. A. S. Member, H. Benedickter, and C. R. B. Fellow, “InP / GaInAs pHEMT Ultralow-Power Consumption MMICs,” pp. 3–6, 2011.
W. Xiao-mei, S. Zheng-wen, C. Yong, and W. Si-xiu, “Design and Analysis of an X-band Low Noise Amplifier,” 2010 Second International Conference on Multimedia and Information Technology, pp. 278–282, 2010.
W.M.Jubadi, F.Packeer, M.Missous, “Optimization of Empirical Modelling of Advanced Highly Strained In0.7Ga0.3As/In0.52Al0.48As pHEMTs for Low Noise Amplifier,” Unpublished.
M. Khan et al., "Ka-band GaAs MMIC LNA using a 0.15um metamorphic InGaAs," 2016 IEEE MTT-S International Wireless Symposium (IWS), Shanghai, 2016, pp. 1-4.
How to Cite
TRANSFER OF COPYRIGHT AGREEMENT
The manuscript is herewith submitted for publication in the Journal of Telecommunication, Electronic and Computer Engineering (JTEC). It has not been published before, and it is not under consideration for publication in any other journals. It contains no material that is scandalous, obscene, libelous or otherwise contrary to law. When the manuscript is accepted for publication, I, as the author, hereby agree to transfer to JTEC, all rights including those pertaining to electronic forms and transmissions, under existing copyright laws, except for the following, which the author(s) specifically retain(s):
- All proprietary right other than copyright, such as patent rights
- The right to make further copies of all or part of the published article for my use in classroom teaching
- The right to reuse all or part of this manuscript in a compilation of my own works or in a textbook of which I am the author; and
- The right to make copies of the published work for internal distribution within the institution that employs me
I agree that copies made under these circumstances will continue to carry the copyright notice that appears in the original published work. I agree to inform my co-authors, if any, of the above terms. I certify that I have obtained written permission for the use of text, tables, and/or illustrations from any copyrighted source(s), and I agree to supply such written permission(s) to JTEC upon request.