Analytical Quantum Drain Current Model in Undoped Cylindrical Surrounding-Gate MOSFETS

Authors

  • Fatimah A. Noor Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia.
  • Christoforus Bimo Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia.
  • Khairurrijal Khairurrijal Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia.

Keywords:

Analytical Model, Cylindrical Surrounding Gate MOSFETs,

Abstract

Analytical potential model for cylindrical surrounding-gate or gate-all-around metal oxide semiconductor field effect transistors (MOSFETs) has been developed. The model presented here takes quantum confinement effects into account in which embodied by two physical parameters, namely, (1) threshold voltage shift and (2) inversion layer centroid. These parameters have been incorporated into the classical procedure as modifications for the gate work function and the inversion layer capacitance to obtain the quantum version of drain current. The model has been able to reproduce drain current vs. gate voltage characteristics obtained from self-consistent calculation. Therefore, it is suitable to use it in the context of circuit simulator.

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Published

2017-04-01

How to Cite

A. Noor, F., Bimo, C., & Khairurrijal, K. (2017). Analytical Quantum Drain Current Model in Undoped Cylindrical Surrounding-Gate MOSFETS. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 9(1-5), 101–105. Retrieved from https://jtec.utem.edu.my/jtec/article/view/1844

Issue

Vol. 9 No. 1-5: Smart City Technology in Communication and Computer Engineering III

Section

Articles

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