Analytical Quantum Drain Current Model in Undoped Cylindrical Surrounding-Gate MOSFETS

Abstract

Analytical potential model for cylindrical surrounding-gate or gate-all-around metal oxide semiconductor field effect transistors (MOSFETs) has been developed. The model presented here takes quantum confinement effects into account in which embodied by two physical parameters, namely, (1) threshold voltage shift and (2) inversion layer centroid. These parameters have been incorporated into the classical procedure as modifications for the gate work function and the inversion layer capacitance to obtain the quantum version of drain current. The model has been able to reproduce drain current vs. gate voltage characteristics obtained from self-consistent calculation. Therefore, it is suitable to use it in the context of circuit simulator.