1.
Yadava N, Chauhan RK. RF Performance Enhancement of Gallium Oxide MOSFET using p-type NiO Pocket near Source and Drain Regions. JTEC [Internet]. 2019Dec.15 [cited 2024Nov.21];11(4):19-23. Available from: https://jtec.utem.edu.my/jtec/article/view/5458