A.H. AM, P.S. M, Ahmad I, Z. A. NF, Mohd Zain A, Salehuddin F, M.Sayed N. Threshold Voltage and Leakage Current Variability on Process Parameter in a 22 nm PMOS device. JTEC [Internet]. 2018Jul.5 [cited 2024Dec.21];10(2-8):9-13. Available from: https://jtec.utem.edu.my/jtec/article/view/4450