Salehuddin F, Ahmad I, Hamid F, Zaharim A, Elgomati H, Majlis B. Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device. JTEC [Internet]. 2010Jun.1 [cited 2024Jul.3];2(1):35-41. Available from: https://jtec.utem.edu.my/jtec/article/view/404