Salehuddin, F., I. Ahmad, F.A. Hamid, A. Zaharim, H.A Elgomati, and B.Y. Majlis. “Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device”. Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 2, no. 1 (June 1, 2010): 35–41. Accessed July 22, 2024. https://jtec.utem.edu.my/jtec/article/view/404.