Salehuddin, F., I. Ahmad, F. Hamid, A. Zaharim, H. Elgomati, and B. Majlis. “Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device”. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), vol. 2, no. 1, June 2010, pp. 35-41, https://jtec.utem.edu.my/jtec/article/view/404.