F. Salehuddin, I. Ahmad, F. Hamid, A. Zaharim, H. Elgomati, and B. Majlis, “Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device”, JTEC, vol. 2, no. 1, pp. 35–41, Jun. 2010.