YADAVA, N.; CHAUHAN, R. K. RF Performance Enhancement of Gallium Oxide MOSFET using p-type NiO Pocket near Source and Drain Regions. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), [S. l.], v. 11, n. 4, p. 19–23, 2019. Disponível em: https://jtec.utem.edu.my/jtec/article/view/5458. Acesso em: 25 apr. 2024.