MAH, S.; AHMAD, I.; KER, P.; Z.A., N. F. Modelling of 14NM Gate Length La2O3 -based n-Type MOSFET. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), [S. l.], v. 8, n. 4, p. 107–110, 2016. Disponível em: https://jtec.utem.edu.my/jtec/article/view/1182. Acesso em: 20 apr. 2024.