A.H., A. M.; P.S., M.; AHMAD, I.; Z. A., N. F.; MOHD ZAIN, A.; SALEHUDDIN, F.; M.SAYED, N. Threshold Voltage and Leakage Current Variability on Process Parameter in a 22 nm PMOS device. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), [S. l.], v. 10, n. 2-8, p. 9–13, 2018. Disponível em: https://jtec.utem.edu.my/jtec/article/view/4450. Acesso em: 21 dec. 2024.