CHAUHAN, M. S.; CHAUHAN, R. K. A Modified Source Impact Ionisation MOSFET (MS I-MOS) for Low Power and Fast Switching Digital Applications. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), [S. l.], v. 10, n. 3, p. 15–19, 2018. Disponível em: https://jtec.utem.edu.my/jtec/article/view/3374. Acesso em: 4 dec. 2024.