SALEHUDDIN, F.; AHMAD, I.; HAMID, F.; ZAHARIM, A.; ELGOMATI, H.; MAJLIS, B. Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), [S. l.], v. 2, n. 1, p. 35–41, 2010. Disponível em: https://jtec.utem.edu.my/jtec/article/view/404. Acesso em: 22 jul. 2024.