300 GHz Detection Using High Electron Mobility Transistor (HEMT) as Sub-THz Detector

Authors

  • M.A Othman
  • I. Harrison

Keywords:

Sub-THz, Detection, HEMTs, photoresponse

Abstract

In this paper, we report the detection of sub-THz (300 GHz) radiation by using High Electron Mobility Transistor (HEMT). The observation of photoresponse are measured against gate voltage. The measured photoresponse is a superposition of a generally increasing response with a decrease in VGS coupled with a small peak approximately at threshold. The response has also been measured as a function of current, frequency and RF input power and there is evidence that the HEMT can be a sensitive subTHz detector.

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How to Cite

Othman, M., & Harrison, I. (2015). 300 GHz Detection Using High Electron Mobility Transistor (HEMT) as Sub-THz Detector. Journal of Telecommunication, Electronic and Computer Engineering (JTEC), 3(2), 73–77. Retrieved from https://jtec.utem.edu.my/jtec/article/view/428

Issue

Vol. 3 No. 2

Section

Articles

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